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PD - 9.1128
IRGBC20K
INSULATED GATE BIPOLAR TRANSISTOR
Features
* Short circuit rated - 10s @ 125C, V GE = 15V * Switching-loss rating includes all "tail" losses * Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
G E C
Short Circuit Rated UltraFast IGBT
VCES = 600V VCE(sat) 3.5V
@VGE = 15V, I C = 6.0A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC @ T C = 25C IC @ T C = 100C ICM ILM tsc VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
Max.
600 10 6.0 20 20 10 20 5.0 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m)
Units
V A
s V mJ W
C
Thermal Resistance
Parameter
RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
-- -- -- --
Typ.
-- 0.50 -- 2 (0.07)
Max.
2.1 -- 80 --
Units
C/W g (oz)
C-837
Revision 1
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IRGBC20K
Electrical Characteristics @ T = 25C (unless otherwise specified) J
V(BR)CES V(BR)ECS
V(BR)CES/TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ gfe ICES IGES
Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current
Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.37 -- V/C VGE = 0V, I C = 1.0mA -- 2.4 3.5 IC = 6.0A V GE = 15V -- 3.6 -- V IC = 10A See Fig. 2, 5 -- 2.9 -- IC = 6.0A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 1.9 3.3 -- S VCE = 100V, I C = 6.0A -- -- 250 A VGE = 0V, V CE = 600V -- -- 1000 VGE = 0V, V CE = 600V, T J = 150C -- -- 100 nA VGE = 20V
Switching Characteristics @ T = 25C (unless otherwise specified) J
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 50, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 17 26 IC = 6.0A 4.3 6.8 nC VCC = 400V See Fig. 8 6.4 11 VGE = 15V 29 -- TJ = 25C 18 -- ns IC = 6.0A, V CC = 480V 58 90 VGE = 15V, R G = 50 120 200 Energy losses include "tail" 0.11 -- 0.13 -- mJ See Fig. 9, 10, 11, 14 0.24 0.31 -- -- s VCC = 360V, T J = 125C VGE = 15V, R G = 50, VCPK < 500V 28 -- TJ = 150C, 22 -- ns IC = 6.0A, V CC = 480V 200 -- VGE = 15V, R G = 50 145 -- Energy losses include "tail" 0.50 -- mJ See Fig. 10, 14 7.5 -- nH Measured 5mm from package 360 -- VGE = 0V 45 -- pF VCC = 30V See Fig. 7 4.7 -- = 1.0MHz
C-838
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IRGBC20K
15
F o r b o th :
Triangular wav e:
12
Load Current (A)
D u ty cycle : 5 0% TJ = 1 2 5 C T s ink = 9 0C G a te dr ive a s sp e cifie d Pow er D is sip ation = 14 W
C lamp voltage: 80% of rated
9
Square w ave: 60% of rated voltage
6
3
Id ea l dio d es
0 0.1 1 10
A
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)
100
100
I C , C ollector-to-E mitte r C urren t (A )
TJ = 2 5 C
10
TJ = 1 50 C
IC , C ollector-to-E m itter Current (A )
10
TJ = 1 50 C TJ = 2 5C
1
0.1 0.1 1
V G E = 15V 2 0 s P U LS E W ID TH
10
1 5 10
V C C = 1 00 V 5 s P UL S E W ID TH
15 20
V C E , C o llector-to-Em itter V oltage (V)
V G E , G ate-to-E m itter V olta g e (V )
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
C-839
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IRGBC20K
10
8
VC E , C ollector-to-E mitte r V oltage (V )
V G E = 1 5V
5.0
Ma xim um D C C ollector C urre nt (A )
V G E = 15 V 80 s P UL S E W ID TH
4.0
I C = 1 2A
6
3.0
4
IC = 6.0A
2.0
2
I C = 3.0 A
0 25 50 75 100 125 150
1.0 -60 -40 -2 0 0 20 40 60 80 100 120 140 160
T C , C ase Tem perature (C )
TC , C ase Tem perature (C )
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature
10
T he rm al R e sp ons e (Z thJ C )
1
D = 0 .5 0
0 .2 0 0 .1 0 0 .0 5
PD M
0.1
0 .0 2 0 .0 1
t
S IN G L E P U L S E (T H E R M A L R E S P O N S E )
N o te s: 1 . D u ty fa c to r D = t 1 /t 2
1 t2
0.01 0.00001
2 . P e a k TJ = P D M x Z thJ C + T C
0.0001
0.001
0.01
0.1
1
10
t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c )
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
C-840
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IRGBC20K
700
600
C, C apacitance (pF)
500
Cies Coes
400
300
V G E , G a te -to -E m itte r V o lta g e (V )
1 00
V GE = 0V, f = 1MHz C ies = C ge + C gc , C ce SHORTED C res = C gc C oes = C ce + C gc
20
V C E = 48 0V I C = 6.0A
16
12
8
200
Cres
100
4
0 1 10
0 0 4 8 12 16 20
V C E , C o llector-to-Em itter V oltage (V)
Q g , T o tal G a te C h a rg e (n C )
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
0.26
Total Switching Losses (mJ)
0.25
Total Switching Losses (mJ)
VCC VGE TC IC
= 480V = 15V = 25C = 6.0A
10
RG = 50 V GE = 15V V CC = 480V I C = 12A
0.24
1
I C = 6.0A I C = 3.0A
0.1
0.23
0.22
0.21
0.20 0 10 20 30 40 50 60
0.01 -60 -40 -20 0 20 40 60 80
A
100 120 140 160
R G , Gate Resistance ()
W
TC, Case Temperature (C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Case Temperature
C-841
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IRGBC20K
1.4
1.2
1.0
I , C o lle c to r-to -E m itte r C u rre n t (A )
Total Switching Losses (mJ)
RG TC V CC V GE
= 50 = 150C = 480V = 15V
100
VG E E 2 0V G= T J = 12 5C
10
S A FE O P E RA TIN G A RE A
0.8
0.6
1
0.4
0.0 0 2 4 6 8 10 12
A
14
C
0.1 1 10 100 1000
0.2
I C , Collector-to-Emitter Current (A)
V C E , C o lle cto r-to-E m itte r V olta g e (V )
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 1 - JEDEC Outline TO-220AB Section D - Page D-12
C-842
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